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EPC2102ENGRT

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EPC2102ENGRT

GANFET 2N-CH 60V 23A DIE

Manufacturer: EPC

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The EPC eGaN® EPC2102ENGRT is a 60V, 2-N-Channel GaNFET array designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 23A at 25°C junction temperature, with a low on-resistance of 4.4mOhm maximum at 20A and 5V Vgs. The EPC2102ENGRT exhibits a gate charge of 6.8nC maximum at 5V and an input capacitance of 830pF maximum at 30V Vds. Operating across a temperature range of -40°C to 150°C (TJ), this component is supplied in a Die package on Tape & Reel. Its GaNFET technology offers superior switching performance and power density, making it suitable for demanding applications in sectors such as automotive, data centers, and industrial power supplies.

Additional Information

Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds830pF @ 30V
Rds On (Max) @ Id, Vgs4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 7mA
Supplier Device PackageDie

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