EPC2102ENGRT
GANFET 2N-CH 60V 23A DIEManufacturer: EPC
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The EPC eGaN® EPC2102ENGRT is a 60V, 2-N-Channel GaNFET array designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 23A at 25°C junction temperature, with a low on-resistance of 4.4mOhm maximum at 20A and 5V Vgs. The EPC2102ENGRT exhibits a gate charge of 6.8nC maximum at 5V and an input capacitance of 830pF maximum at 30V Vds. Operating across a temperature range of -40°C to 150°C (TJ), this component is supplied in a Die package on Tape & Reel. Its GaNFET technology offers superior switching performance and power density, making it suitable for demanding applications in sectors such as automotive, data centers, and industrial power supplies.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Supplier Device Package | Die |
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