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EPC2101ENGRT

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EPC2101ENGRT

GANFET 2N-CH 60V 9.5A/38A DIE

Manufacturer: EPC

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The EPC eGaN® EPC2101ENGRT is a 60V enhancement-mode Gallium Nitride (GaN) FET that functions as a 2 N-Channel MOSFET array, configured as a half-bridge. This device offers a continuous drain current of 9.5A and a pulsed drain current of 38A at 25°C. Key performance characteristics include a maximum Rds On of 11.5mOhm at 20A and 5V, an input capacitance (Ciss) of 300pF maximum at 30V, and a gate charge (Qg) of 2.7nC maximum at 5V. The threshold voltage (Vgs(th)) is 2.5V maximum at 2mA. This surface mount die is supplied in Tape & Reel (TR) packaging and operates across a temperature range of -40°C to 150°C (TJ). Applications for this component include DC-DC converters, point-of-load converters, and motor drives.

Additional Information

Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds300pF @ 30V
Rds On (Max) @ Id, Vgs11.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs2.7nC @ 5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 2mA
Supplier Device PackageDie

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