EPC2101ENGRT
GANFET 2N-CH 60V 9.5A/38A DIEManufacturer: EPC
Categories: FET, MOSFET Arrays
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The EPC eGaN® EPC2101ENGRT is a 60V enhancement-mode Gallium Nitride (GaN) FET that functions as a 2 N-Channel MOSFET array, configured as a half-bridge. This device offers a continuous drain current of 9.5A and a pulsed drain current of 38A at 25°C. Key performance characteristics include a maximum Rds On of 11.5mOhm at 20A and 5V, an input capacitance (Ciss) of 300pF maximum at 30V, and a gate charge (Qg) of 2.7nC maximum at 5V. The threshold voltage (Vgs(th)) is 2.5V maximum at 2mA. This surface mount die is supplied in Tape & Reel (TR) packaging and operates across a temperature range of -40°C to 150°C (TJ). Applications for this component include DC-DC converters, point-of-load converters, and motor drives.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 2mA |
| Supplier Device Package | Die |
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