EPC2100ENGRT
GANFET 2 N-CH 30V 9.5A/38A DIEManufacturer: EPC
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The EPC EPC2100ENGRT, a member of the eGaN® series, is a 30V Gallium Nitride (GaN) FET offering a 2-channel (half-bridge) configuration in a die package. This device boasts low on-resistance, with typical values of 8.2mOhm and 2.1mOhm at 25A/5V, facilitating efficient power conversion. It supports a continuous drain current of 10A (Ta) and 40A (Ta) at 25°C, with peak pulsed currents reaching 38A. Key parameters include a gate charge of 4.9nC and 19nC (max) at 15V, and input capacitance of 475pF and 1960pF (max) at 15V. Designed for surface mount applications and supplied on tape and reel (TR), the EPC2100ENGRT operates across a temperature range of -40°C to 150°C (TJ). Its high performance characteristics make it suitable for demanding applications in power supplies, DC-DC converters, and motor drives.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 40A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 15V, 1960pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 15V, 19nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 4mA, 2.5V @ 16mA |
| Supplier Device Package | Die |
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