FBG20N04ASH
GAN FET HEMT 200V 4A 4FSMD-AManufacturer: EPC Space, LLC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC Space, LLC e-GaN® series FBG20N04ASH is an N-Channel Gallium Nitride Field Effect Transistor designed for high-performance power applications. This device features a 200V drain-source breakdown voltage and a continuous drain current capability of 4A at 25°C (Tc). The low on-resistance of 130mOhm at 4A and 5V gate drive, coupled with a gate charge of 3nC, enables efficient switching performance. Input capacitance (Ciss) is 150pF at 100V. The FBG20N04ASH is housed in a compact 4-SMD package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Its advanced GaNFET technology makes it suitable for demanding applications in areas such as aerospace, defense, and high-frequency power conversion.
Additional Information
Series: e-GaN®RoHS Status: unknownManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | 4-SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 100 V |
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