FBG10N05ASH
GAN FET HEMT 100V 5A 4FSMD-AManufacturer: EPC Space, LLC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 5A (Tc) Surface Mount 4-SMD
Additional Information
Series: eGaN®RoHS Status: unknownManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1.2mA |
| Supplier Device Package | 4-SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 233 pF @ 50 V |
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