EPC7014UBSH
GAN FET HEMT 60V 1A 4UBManufacturer: EPC Space, LLC
Categories: Single FETs, MOSFETs
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EPC Space, LLC presents the EPC7014UBSH, a high-performance N-Channel GaNFET from the e-GaN® series. This device features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1A at 25°C (Tc). The Rds On is specified at a maximum of 580mOhm at 1A and 5V Vgs. With a Ciss of 22pF (max) at 30V, this component is designed for efficient power conversion applications. The EPC7014UBSH is housed in a compact 4-SMD, No Lead surface mount package, suitable for demanding environments with an operating temperature range of -55°C to 150°C (TJ). Its Gallium Nitride technology enables superior performance characteristics for use in sectors such as aerospace, defense, and high-frequency power systems.
Additional Information
Series: e-GaN®RoHS Status: unknownManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 1A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 140µA |
| Supplier Device Package | 4-SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22 pF @ 30 V |
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