DRDPB26W-7
TRANS PREBIAS PNP 50V SOT363Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DRDPB26W-7 is a PNP pre-biased bipolar transistor featuring integrated base resistor (R1 = 220 Ohms) and base-emitter resistor (R2 = 4.7 kOhms). This device operates with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 600 mA. It offers a transition frequency of 200 MHz and a power dissipation of 200 mW. The transistor type is PNP Pre-Biased + Diode, with a Vce(sat) of 300mV @ 2.5mA, 50mA and a DC current gain (hFE) of 47 minimum at 50mA, 5V. Packaged in a SOT-363 surface mount configuration, this component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased + Diode |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SOT-363 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 220 Ohms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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