DDTD143EU-7-F
TRANS PREBIAS NPN 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated NPN Pre-Biased Transistor, part number DDTD143EU-7-F, is a surface mount bipolar junction transistor (BJT) configured with internal base resistors for simplified circuit design. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It operates with a transition frequency of 200MHz and dissipates a maximum power of 200mW. The SOT-323 package houses an NPN transistor with integrated base resistors R1 and R2 specified at 4.7 kOhms. The transistor exhibits a minimum DC current gain (hFE) of 47 at 50mA collector current and 5V collector-emitter voltage. Typical applications for this component include logic gates, inverters, and switching circuits within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |