DDTD143EC-7-F
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTD143EC-7-F is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. With a transition frequency of 200MHz and a power dissipation of 200mW, it is suitable for use in consumer electronics and industrial control systems. The internal resistors, R1 and R2, are specified at 4.7kOhms each, facilitating simplified circuit design. The transistor is supplied in a SOT-23-3 package, presented on tape and reel for automated assembly. The DC current gain (hFE) is a minimum of 47 at 50mA and 5V, with a Vce saturation of 300mV at 2.5mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |