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DDTD142TC-7-F

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DDTD142TC-7-F

TRANS PREBIAS NPN 50V SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated NPN Pre-Biased Transistor, part number DDTD142TC-7-F, is a surface-mount bipolar junction transistor designed for efficient switching and amplification applications. This component features a pre-biased configuration with an integrated base resistor (R1) of 470 Ohms, simplifying circuit design. It offers a Collector-Emitter Breakdown Voltage (Vce(max)) of 50 V and a maximum Collector Current (Ic(max)) of 500 mA. The transistor exhibits a transition frequency (fT) of 200 MHz and a maximum power dissipation of 200 mW. The device is supplied in a compact SOT-23-3 package, ideal for space-constrained designs in industries such as consumer electronics and industrial automation. Key parameters include a minimum DC Current Gain (hFE) of 100 at 5mA/5V and a Vce(sat) of 300mV at 2.5mA/50mA. The component is provided on a Tape & Reel (TR) for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 42 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)470 Ohms

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