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DDTD133HC-7-F

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DDTD133HC-7-F

TRANS PREBIAS NPN 50V SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTD133HC-7-F is an NPN pre-biased bipolar transistor. This surface mount device, packaged in a SOT-23-3, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. It features a transition frequency of 200 MHz and a maximum power dissipation of 200 mW. The internal biasing includes a base resistor (R1) of 3.3 kOhms and an emitter base resistor (R2) of 10 kOhms. This component is utilized in industrial, automotive, and consumer electronics applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 50mA, 5V
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)3.3 kOhms
Resistor - Emitter Base (R2)10 kOhms

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