DDTD123YU-7-F
TRANS PREBIAS NPN 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated NPN Pre-Biased Transistor, part number DDTD123YU-7-F, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. This SOT-323 packaged device features integrated base resistors (R1: 2.2 kOhms, R2: 10 kOhms) for simplified circuit design. With a transition frequency of 200MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring precise biasing and fast switching. The minimum DC current gain (hFE) is 56 at 50mA and 5V. This component is commonly utilized in portable electronics and general-purpose switching applications. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |