DDTD123EU-7-F
TRANS PREBIAS NPN 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTD123EU-7-F is an NPN pre-biased bipolar junction transistor in a SOT-323 package. This device features a collector-emitter breakdown voltage of 50V and can handle a continuous collector current of up to 500mA. The transistor offers a minimum DC current gain (hFE) of 39 at 50mA and 5V, with a transition frequency of 200MHz. It includes integrated base resistors R1 and R2, both specified at 2.2 kOhms, simplifying circuit design. The maximum power dissipation is 200mW. This component is suitable for surface mount applications and is supplied on tape and reel. Typical applications include signal switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 39 @ 50mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |