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DDTD123EU-7-F

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DDTD123EU-7-F

TRANS PREBIAS NPN 50V SOT323

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTD123EU-7-F is an NPN pre-biased bipolar junction transistor in a SOT-323 package. This device features a collector-emitter breakdown voltage of 50V and can handle a continuous collector current of up to 500mA. The transistor offers a minimum DC current gain (hFE) of 39 at 50mA and 5V, with a transition frequency of 200MHz. It includes integrated base resistors R1 and R2, both specified at 2.2 kOhms, simplifying circuit design. The maximum power dissipation is 200mW. This component is suitable for surface mount applications and is supplied on tape and reel. Typical applications include signal switching and amplification in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce39 @ 50mA, 5V
Supplier Device PackageSOT-323
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms

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