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DDTD122TU-7-F

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DDTD122TU-7-F

TRANS PREBIAS NPN 50V SOT323

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTD122TU-7-F is an NPN, pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. The transition frequency is specified at 200 MHz, with a maximum power dissipation of 200 mW. The transistor type is NPN - Pre-Biased, and it includes an integrated base resistor (R1) of 220 Ohms. The device is supplied in a SOT-323 package, suitable for surface mounting, and is delivered on tape and reel. The DDTD122TU-7-F is commonly utilized in industrial control equipment and consumer electronics applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Supplier Device PackageSOT-323
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)220 Ohms

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