DDTD122TC-7-F
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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The Diodes Incorporated DDTD122TC-7-F is an NPN pre-biased bipolar transistor. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V collector-emitter voltage. The transition frequency for this transistor is 200MHz. The DDTD122TC-7-F is supplied in a SOT-23-3 surface mount package and has a maximum power dissipation of 200mW. It is commonly employed in industrial and consumer electronics applications requiring simplified circuit design and reduced component count. The internal base resistor (R1) is specified at 220 Ohms.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 220 Ohms |
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