DDTD122LU-7-F
TRANS PREBIAS NPN 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTD122LU-7-F is an NPN pre-biased bipolar junction transistor. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The transition frequency is rated at 200MHz, with a maximum power dissipation of 200mW. It integrates internal base resistors, R1 at 220 Ohms and R2 at 10 kOhms, simplifying circuit design. The device exhibits a minimum DC current gain (hFE) of 56 at 50mA collector current and 5V Vce. Saturation voltage (Vce Sat) is specified at 300mV maximum for 50mA collector current and 2.5mA base current. This surface mount component is supplied in a SOT-323 package, also known as SC-70, on tape and reel. Applications include switching and amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 220 Ohms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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