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DDTD122JC-7-F

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DDTD122JC-7-F

TRANS PREBIAS NPN 50V SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTD122JC-7-F is an NPN pre-biased bipolar junction transistor designed for surface mounting in a SOT-23-3 package. This device features a collector-emitter breakdown voltage (Vce) of 50V and can handle a maximum collector current (Ic) of 500mA. The transistor offers a transition frequency (fT) of 200 MHz. It includes integrated base resistors R1 (220 Ohms) and R2 (4.7 kOhms) for simplified circuit design. Typical applications for this component include consumer electronics and industrial control systems. The device operates with a maximum power dissipation of 200 mW.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce47 @ 50mA, 5V
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)220 Ohms
Resistor - Emitter Base (R2)4.7 kOhms

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