DDTD122JC-7-F
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTD122JC-7-F is an NPN pre-biased bipolar junction transistor designed for surface mounting in a SOT-23-3 package. This device features a collector-emitter breakdown voltage (Vce) of 50V and can handle a maximum collector current (Ic) of 500mA. The transistor offers a transition frequency (fT) of 200 MHz. It includes integrated base resistors R1 (220 Ohms) and R2 (4.7 kOhms) for simplified circuit design. Typical applications for this component include consumer electronics and industrial control systems. The device operates with a maximum power dissipation of 200 mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 220 Ohms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |