DDTD114TU-7-F
TRANS PREBIAS NPN 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTD114TU-7-F is an NPN pre-biased bipolar junction transistor designed for surface mount applications in a SOT-323 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The DC current gain (hFE) is a minimum of 100 at 5mA collector current and 5V Vce. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, it is suitable for various signal processing and switching functions. The integrated base resistor (R1) is 10 kOhms, and the collector cutoff current (ICBO) is a maximum of 500nA. Vce saturation is specified at 300mV maximum for 50mA collector current driven by 2.5mA base current. This device finds application in areas such as consumer electronics and industrial control systems. The DDTD114TU-7-F is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |