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DDTD114TU-7-F

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DDTD114TU-7-F

TRANS PREBIAS NPN 50V SOT323

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTD114TU-7-F is an NPN pre-biased bipolar junction transistor designed for surface mount applications in a SOT-323 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The DC current gain (hFE) is a minimum of 100 at 5mA collector current and 5V Vce. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, it is suitable for various signal processing and switching functions. The integrated base resistor (R1) is 10 kOhms, and the collector cutoff current (ICBO) is a maximum of 500nA. Vce saturation is specified at 300mV maximum for 50mA collector current driven by 2.5mA base current. This device finds application in areas such as consumer electronics and industrial control systems. The DDTD114TU-7-F is supplied on a tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Supplier Device PackageSOT-323
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)10 kOhms

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