DDTD114TC-7-F
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTD114TC-7-F is an NPN pre-biased bipolar transistor designed for efficient signal switching and amplification. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA, with a low saturation voltage of 300mV at 50mA. The integrated base resistor (R1) is 10 kOhms, simplifying circuit design. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, the DDTD114TC-7-F is suitable for applications in industrial control, consumer electronics, and power management systems. The device is supplied in a SOT-23-3 surface-mount package, delivered on tape and reel for high-volume automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |