DDTD114EU-7-F
TRANS PREBIAS NPN 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTD114EU-7-F is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. Featuring an integrated base resistor network, this component simplifies circuit design and reduces component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The transistor exhibits a transition frequency of 200MHz and a maximum power dissipation of 200mW. Key parameters include a minimum DC current gain (hFE) of 56 at 50mA/5V and a saturation voltage of 300mV at 2.5mA/50mA. The internal base resistors are specified as R1 = 10 kOhms and R2 = 10 kOhms. This device is supplied in a SOT-323 package, commonly referred to as SC-70, and is available on tape and reel. Its characteristics make it suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |