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DDTD114EU-7-F

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DDTD114EU-7-F

TRANS PREBIAS NPN 50V SOT323

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTD114EU-7-F is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. Featuring an integrated base resistor network, this component simplifies circuit design and reduces component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The transistor exhibits a transition frequency of 200MHz and a maximum power dissipation of 200mW. Key parameters include a minimum DC current gain (hFE) of 56 at 50mA/5V and a saturation voltage of 300mV at 2.5mA/50mA. The internal base resistors are specified as R1 = 10 kOhms and R2 = 10 kOhms. This device is supplied in a SOT-323 package, commonly referred to as SC-70, and is available on tape and reel. Its characteristics make it suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 50mA, 5V
Supplier Device PackageSOT-323
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms

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