DDTD113EU-7-F
TRANS PREBIAS NPN 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTD113EU-7-F is an NPN pre-biased bipolar junction transistor designed for surface mounting in the SOT-323 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The integrated biasing resistors, R1 and R2, are both 1 kOhm, facilitating simplified circuit design. It offers a minimum DC current gain (hFE) of 33 at 50mA and 5V, with a transition frequency of 200 MHz. The maximum power dissipation is 200 mW. Typical applications include digital logic circuits and signal switching in the consumer electronics and industrial automation industries. The device is supplied on a tape and reel for high-volume manufacturing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |