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Single, Pre-Biased Bipolar Transistors

DDTC142TE-7

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DDTC142TE-7

TRANS PREBIAS NPN 50V SOT523

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTC142TE-7 is an NPN pre-biased bipolar junction transistor (BJT) in a SOT-523 package, supplied on tape and reel. This surface-mount device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage. The transition frequency is 200MHz, and it has a maximum power dissipation of 150mW. The internal base resistor (R1) is 470 Ohms. This component is suitable for applications requiring simplified digital logic and signal conditioning, commonly found in consumer electronics and industrial control systems. The collector cutoff current (ICBO) is a maximum of 500nA.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-523
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Supplier Device PackageSOT-523
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Frequency - Transition200 MHz
Resistor - Base (R1)470 Ohms

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