DDTC142JE-7-F
TRANS PREBIAS NPN 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTC142JE-7-F is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transition frequency is rated at 200 MHz, with a maximum power dissipation of 150 mW. It is housed in a compact SOT-523 surface mount package and supplied on tape and reel. The internal bias resistors are specified as R1 (base) at 470 Ohms and R2 (emitter base) at 10 kOhms. The minimum DC current gain (hFE) is 56 at 10 mA collector current and 5 V Vce. This device is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 10mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 470 Ohms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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