DDTC124GKA-7-F
TRANS PREBIAS NPN 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTC124GKA-7-F is a pre-biased NPN bipolar junction transistor (BJT). This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. It includes an internal emitter-base resistor (R2) of 22 kOhms, simplifying circuit design by eliminating the need for external biasing components. The DC current gain (hFE) is a minimum of 56 at 5mA collector current and 5V Vce. Packaged in an SC-59-3 (TO-236-3, SOT-23-3) surface-mount format, this transistor is supplied on tape and reel. Applications include digital logic circuits, switching applications, and general-purpose amplification where simplified biasing is advantageous.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 22 kOhms |