DDTC123EE-7
TRANS PREBIAS NPN 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTC123EE-7 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors R1 (2.2 kOhms) and R2 (2.2 kOhms), simplifying circuit design. The transition frequency is 250 MHz, with a maximum power dissipation of 150 mW. The device is supplied in a SOT-523 package, delivered on tape and reel. This transistor is commonly utilized in consumer electronics and industrial control systems. The DC current gain (hFE) is a minimum of 20 at 20mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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