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DDTC123EE-7

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DDTC123EE-7

TRANS PREBIAS NPN 50V SOT523

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTC123EE-7 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors R1 (2.2 kOhms) and R2 (2.2 kOhms), simplifying circuit design. The transition frequency is 250 MHz, with a maximum power dissipation of 150 mW. The device is supplied in a SOT-523 package, delivered on tape and reel. This transistor is commonly utilized in consumer electronics and industrial control systems. The DC current gain (hFE) is a minimum of 20 at 20mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-523
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20mA, 5V
Supplier Device PackageSOT-523
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Frequency - Transition250 MHz
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms

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