DDTC115GCA-7-F
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTC115GCA-7-F is an NPN pre-biased bipolar transistor. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 250 MHz and a maximum power dissipation of 200mW. The device is housed in a SOT-23-3 surface mount package. Key specifications include a minimum DC current gain (hFE) of 82 at 5mA and 5V, and a Vce saturation of 300mV at 500µA and 10mA. The emitter base resistor (R2) is rated at 100 kOhms. This transistor is commonly utilized in industrial and consumer electronics applications. The DDTC115GCA-7-F is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 100 kOhms |
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