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DDTC115EKA-7-F

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DDTC115EKA-7-F

TRANS PREBIAS NPN 50V SC59-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

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Diodes Incorporated DDTC115EKA-7-F is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. The device is packaged in an SC-59-3 (TO-236-3, SC-59, SOT-23-3) and supplied on tape and reel. It includes integrated base resistors (R1 = 100 kOhms, R2 = 100 kOhms), simplifying circuit design. Typical applications include digital logic, signal switching, and general-purpose amplification across various industrial and consumer electronics sectors. The minimum DC current gain (hFE) is 82 at 5mA collector current and 5V collector-emitter voltage. Collector cutoff current is a maximum of 500nA, with a Vce(sat) of 300mV at 250µA base current and 5mA collector current.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA, 5V
Supplier Device PackageSC-59-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms

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