DDTC114WKA-7-F
TRANS PREBIAS NPN 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Diodes Incorporated DDTC114WKA-7-F is a pre-biased NPN bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device offers a high transition frequency of 250 MHz and a maximum power dissipation of 200 mW. It is supplied in a surface mount SC-59-3 package. Internal base resistors include values of 10 kOhms (R1) and 4.7 kOhms (R2), providing a minimum DC current gain (hFE) of 24 at 10 mA collector current and 5 V collector-emitter voltage. Typical saturation voltage (Vce(sat)) is 300 mV at 500 µA base current and 10 mA collector current, with a collector cutoff current of 500 nA. The DDTC114WKA-7-F is commonly utilized in industrial, computing, and consumer electronics applications requiring simplified digital logic implementation. This component is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 24 @ 10mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |