DDTC114WCA-7
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated offers the DDTC114WCA-7, an NPN pre-biased bipolar transistor. This component features integrated base resistors, specifically R1 at 10 kOhms and R2 at 4.7 kOhms, simplifying circuit design and reducing component count. It is rated for a Collector-Emitter Breakdown Voltage (VCEO) of 50V and a maximum Collector Current (IC) of 100mA. The transition frequency (fT) is 250 MHz, and the maximum power dissipation is 200 mW. With a low saturation voltage of 300mV at 10mA collector current, it is suitable for applications requiring efficient switching. The DDTC114WCA-7 is supplied in a SOT-23-3 surface mount package, presented in a Tape & Reel (TR) format. This transistor finds utility in various digital logic circuits and general-purpose amplification applications across industries such as consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 24 @ 10mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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