DDTC114GKA-7-F
TRANS PREBIAS NPN 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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The Diodes Incorporated DDTC114GKA-7-F is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 30 at 5 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 250 MHz. A built-in 10 kOhm emitter-base resistor (R2) simplifies circuit design, and the transistor exhibits a Vce saturation of 300 mV at 500 µA base current and 10 mA collector current. With a maximum power dissipation of 200 mW, this transistor is suitable for use in consumer electronics and industrial control systems. The DDTC114GKA-7-F is supplied in a SC-59-3 package on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |