DDTC114GCA-7-F
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTC114GCA-7-F is an NPN pre-biased bipolar transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device offers a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. It is supplied in a SOT-23-3 package, commonly known as TO-236-3 or SC-59. The integrated base-emitter resistor (R2) is 10 kOhms. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 5mA, 5V and a collector cutoff current (ICBO) of 500 nA. Saturation voltage (Vce Sat) is specified at a maximum of 300 mV for 500 µA base current and 10 mA collector current. This transistor is utilized in industrial, consumer electronics, and telecommunications sectors. The DDTC114GCA-7-F is delivered on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
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