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DDTC114EKA-7-F

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DDTC114EKA-7-F

TRANS PREBIAS NPN 50V SC59-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

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Diodes Incorporated DDTC114EKA-7-F is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 200mW, it is suitable for general purpose switching and amplification in consumer electronics, industrial automation, and communication systems. The device integrates base resistors of 10 kOhms (R1) and 10 kOhms (R2), simplifying circuit design by eliminating external bias components. Delivered in a Tape & Reel (TR) package, the SC-59-3 (TO-236-3, SOT-23-3) housing facilitates high-volume manufacturing. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 5mA/5V and a collector cutoff current of 500nA. Saturation voltage at 500µA/10mA is 300mV.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Supplier Device PackageSC-59-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms

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