DDTC114EE-7
TRANS PREBIAS NPN 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Diodes Incorporated DDTC114EE-7 is an NPN pre-biased bipolar transistor designed for surface mount applications within a SOT-523 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 150mW, it is suitable for applications requiring precise switching and amplification. The internal base resistors are specified as 10kOhms for both R1 and R2, ensuring a stable bias condition. The device exhibits a typical Vce saturation of 300mV at 500µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage. This transistor finds utility in various electronic systems including consumer electronics and industrial control. The product is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
DDTC114TKA-7-F
TRANS PREBIAS NPN 50V SC59-3
DDTA115GCA-7
TRANS PREBIAS PNP 200MW SOT23-3
DDTA122LU-7
TRANS PREBIAS PNP 200MW SOT323
