DDTC113ZKA-7-F
TRANS PREBIAS NPN 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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The Diodes Incorporated DDTC113ZKA-7-F is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a guaranteed DC current gain (hFE) of at least 33 at 5mA collector current and 5V Vce. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this transistor is suitable for general-purpose switching and amplification circuits. The integrated base resistors (R1 = 1kO, R2 = 10kO) simplify circuit design by eliminating the need for external biasing components. The device is supplied in the SC-59-3 package, commonly known as TO-236-3 or SOT-23-3, and is provided in tape and reel packaging. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 5mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |