DDTB123YU-7-F
TRANS PREBIAS PNP 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTB123YU-7-F is a PNP pre-biased bipolar junction transistor in a SOT-323 package. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. The transition frequency is 200 MHz, with a maximum power dissipation of 200 mW. It includes a pre-built bias network with a base resistor (R1) of 2.2 kOhms and an emitter-base resistor (R2) of 10 kOhms, simplifying circuit design and reducing component count. The DC current gain (hFE) is a minimum of 56 at 50 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 300 mV at 2.5 mA base current and 50 mA collector current. This component is commonly used in portable electronics and general-purpose switching applications. The DDTB123YU-7-F is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |