DDTB123EC-7-F
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTB123EC-7-F is a PNP Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mounting in a SOT-23-3 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. With a transition frequency of 200MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring moderate switching speeds and power handling. The integrated base resistors, R1 and R2, are both specified at 2.2 kOhms, simplifying circuit design by eliminating external biasing components. Typical applications include digital logic, signal switching, and general-purpose amplification in consumer electronics and industrial control systems. The device exhibits a Vce(sat) of 300mV at 2.5mA base current and 50mA collector current, with a minimum DC current gain (hFE) of 39 at 50mA collector current and 5V Vce. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 39 @ 50mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |