DDTB122TU-7
TRANS PREBIAS PNP 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTB122TU-7 is a PNP pre-biased bipolar junction transistor designed for efficient signal switching and amplification. This SOT-323 packaged device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. With a transition frequency of 200 MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring moderate switching speeds and power handling. The integrated base resistor (R1) of 220 Ohms simplifies circuit design, facilitating direct drive from logic sources. Key parameters include a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V Vce, and a saturation voltage (Vce(sat)) of 300mV at 2.5mA base current and 50mA collector current. It is supplied in Tape & Reel packaging. This component is commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 220 Ohms |
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