DDTB122JC-7-F
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTB122JC-7-F is a PNP pre-biased bipolar junction transistor designed for surface mounting. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The internal base resistor (R1) is specified at 220 Ohms, and the emitter base resistor (R2) is 4.7 kOhms, facilitating simplified circuit design. With a transition frequency of 200 MHz and a power dissipation rating of 200 mW, it is suitable for applications in consumer electronics and industrial control systems. The transistor is supplied in a SOT-23-3 package, delivered on tape and reel. Minimum DC current gain (hFE) is 47 at 50mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 300mV at 2.5mA base current and 50mA collector current. Collector cutoff current is rated at 500nA maximum.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 220 Ohms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |