DDTB114TC-7-F
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTB114TC-7-F is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, it is suitable for signal switching and amplification in various electronic circuits. The device is housed in a SOT-23-3 package, ensuring compact integration. It includes an integrated base resistor (R1) of 10 kOhms, simplifying circuit design and reducing component count. Typical applications include digital logic circuits, interface circuitry, and general-purpose amplification across industrial and consumer electronics sectors. The transistor exhibits a minimum DC current gain (hFE) of 100 at 5 mA collector current and 5 V Vce, with a saturation voltage (Vce(sat)) of 300 mV at 2.5 mA base current and 50 mA collector current. The nominal collector cutoff current (ICBO) is 500 nA. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |