DDTB114GU-7-F
TRANS PREBIAS PNP 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTB114GU-7-F is a PNP pre-biased bipolar transistor in a SOT-323 (SC-70) surface mount package. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. With a transition frequency of 200 MHz and a power dissipation of 200 mW, it is suitable for applications requiring minimal external components. The integrated emitter base resistor (R2) is specified at 10 kOhms. This transistor is often utilized in digital logic circuits, signal switching, and general-purpose amplification across various industrial and consumer electronics sectors. Key electrical parameters include a minimum DC current gain (hFE) of 56 at 5mA/5V and a Vce(sat) of 300mV at 2.5mA/50mA. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |