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DDTA143EKA-7-F

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DDTA143EKA-7-F

TRANS PREBIAS PNP 50V SC59-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

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Diodes Incorporated DDTA143EKA-7-F is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor exhibits a typical transition frequency of 250 MHz and a power dissipation rating of 200 mW. It is supplied in a SC-59-3 package, specifically TO-236-3, SC-59, SOT-23-3, on tape and reel. Integrated base resistors, R1 and R2, are both specified at 4.7 kOhms, providing a minimum DC current gain (hFE) of 20 at 10 mA collector current and 5 V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 300 mV at 500 µA base current and 10 mA collector current. The collector cutoff current is rated at a maximum of 500 nA. This device is suitable for use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10mA, 5V
Supplier Device PackageSC-59-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms

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