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DDTA125TE-7-F

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DDTA125TE-7-F

TRANS PREBIAS PNP 50V SOT523

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTA125TE-7-F is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistor (R1) is specified at 200 kOhms, contributing to its pre-biased configuration. With a transition frequency of 250 MHz and a maximum power dissipation of 150 mW, the DDTA125TE-7-F offers efficient switching and amplification characteristics. The device is housed in a compact SOT-523 package, supplied on tape and reel. It finds application in various electronic circuits, including consumer electronics and industrial control systems. The minimum DC current gain (hFE) is 100 at 1mA collector current and 5V collector-emitter voltage. Collector cutoff current (ICBO) is a maximum of 500nA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-523
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 50µA, 500µA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Supplier Device PackageSOT-523
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Frequency - Transition250 MHz
Resistor - Base (R1)200 kOhms

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