DDTA125TE-7-F
TRANS PREBIAS PNP 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA125TE-7-F is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistor (R1) is specified at 200 kOhms, contributing to its pre-biased configuration. With a transition frequency of 250 MHz and a maximum power dissipation of 150 mW, the DDTA125TE-7-F offers efficient switching and amplification characteristics. The device is housed in a compact SOT-523 package, supplied on tape and reel. It finds application in various electronic circuits, including consumer electronics and industrial control systems. The minimum DC current gain (hFE) is 100 at 1mA collector current and 5V collector-emitter voltage. Collector cutoff current (ICBO) is a maximum of 500nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50µA, 500µA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 200 kOhms |