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DDTA124GKA-7-F

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DDTA124GKA-7-F

TRANS PREBIAS PNP 50V SC59-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

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Diodes Incorporated DDTA124GKA-7-F is a PNP pre-biased bipolar junction transistor. This surface mount component, housed in an SC-59-3 package (TO-236-3, SOT-23-3), offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features a transition frequency of 250 MHz and a power dissipation of 200 mW. The internal emitter-base resistor (R2) is specified at 22 kOhms, contributing to a minimum DC current gain (hFE) of 56 at 5 mA collector current and 5 V Vce. Saturation voltage (Vce Sat) is a maximum of 300 mV at 500 µA base current and 10 mA collector current. The collector cutoff current (ICBO) is a maximum of 500 nA. This device is commonly found in portable electronics and general-purpose switching applications. The DDTA124GKA-7-F is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V
Supplier Device PackageSC-59-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Emitter Base (R2)22 kOhms

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