DDTA124GE-7-F
TRANS PREBIAS PNP 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated presents the DDTA124GE-7-F, a PNP pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Designed for surface mounting, it is housed in a compact SOT-523 package. The transistor offers a transition frequency of 250MHz and a maximum power dissipation of 150mW. Key specifications include a minimum DC current gain (hFE) of 56 at 5mA and 5V, and a Vce saturation voltage of 300mV at 500µA and 10mA. The integrated emitter base resistor (R2) is 22 kOhms. This device is commonly utilized in applications such as digital logic, switching circuits, and general-purpose amplification across various electronics industries. The DDTA124GE-7-F is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 22 kOhms |
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