DDTA123JE-7-F
TRANS PREBIAS PNP 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA123JE-7-F is a PNP pre-biased bipolar junction transistor designed for general-purpose switching and amplification applications. This component features integrated base resistors (R1 = 2.2 kOhms, R2 = 47 kOhms) for simplified circuit design and reduced component count. It operates with a collector-emitter breakdown voltage (Vce) of 50 V and a maximum collector current (Ic) of 100 mA, with a power dissipation rating of 150 mW. The transistor exhibits a transition frequency (fT) of 250 MHz and a minimum DC current gain (hFE) of 80 at 10 mA and 5 V. The Vce(sat) is specified at a maximum of 300 mV for 250 µA base current and 5 mA collector current. The DDTA123JE-7-F is housed in a compact SOT-523 surface-mount package, supplied on tape and reel. This device is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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