DDTA115GKA-7-F
TRANS PREBIAS PNP 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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The Diodes Incorporated DDTA115GKA-7-F is a PNP pre-biased bipolar junction transistor. This surface mount component, housed in an SC-59-3 package, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a transition frequency of 250 MHz and a maximum power dissipation of 200mW. The integrated base-emitter resistor (R2) is 100 kOhms, and a typical DC current gain (hFE) of 82 is specified at 5mA collector current and 5V collector-emitter voltage. This transistor is suitable for applications in consumer electronics, industrial control, and telecommunications where simplified circuit design and reduced component count are beneficial.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 100 kOhms |