DDTA115GCA-7-F
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA115GCA-7-F is a PNP pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz, it is suitable for applications requiring fast switching. The device has a maximum power dissipation of 200mW and is supplied in a SOT-23-3 surface-mount package, ideal for miniaturized designs. Key parameters include a minimum DC current gain (hFE) of 82 at 5mA collector current and 5V Vce, and a Vce saturation of 300mV at 500µA base current and 10mA collector current. The integrated emitter base resistor is 100 kOhms. This transistor is commonly utilized in industrial and consumer electronics for signal switching and amplification. It is offered in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 100 kOhms |
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