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DDTA115GCA-7-F

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DDTA115GCA-7-F

TRANS PREBIAS PNP 50V SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTA115GCA-7-F is a PNP pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz, it is suitable for applications requiring fast switching. The device has a maximum power dissipation of 200mW and is supplied in a SOT-23-3 surface-mount package, ideal for miniaturized designs. Key parameters include a minimum DC current gain (hFE) of 82 at 5mA collector current and 5V Vce, and a Vce saturation of 300mV at 500µA base current and 10mA collector current. The integrated emitter base resistor is 100 kOhms. This transistor is commonly utilized in industrial and consumer electronics for signal switching and amplification. It is offered in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA, 5V
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Emitter Base (R2)100 kOhms

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