DDTA115EKA-7-F
TRANS PREBIAS PNP 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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The Diodes Incorporated DDTA115EKA-7-F is a PNP pre-biased bipolar transistor designed for surface mount applications. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring efficient signal switching and amplification. The internal base resistors, R1 and R2, are both 100 kOhms, simplifying circuit design by eliminating the need for external biasing components. The transistor exhibits a minimum DC current gain (hFE) of 82 at 5mA collector current and 5V Vce. Packaged in an SC-59-3 (TO-236-3, SC-59, SOT-23-3) format and supplied on tape and reel, this component is commonly utilized in consumer electronics, industrial automation, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |