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DDTA114YKA-7-F

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DDTA114YKA-7-F

TRANS PREBIAS PNP 50V SC59-3

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTA114YKA-7-F is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mounting in a SC-59-3 package (TO-236-3, SC-59, SOT-23-3). This component features integrated 10 kOhm and 47 kOhm resistors, offering a simplified solution for bias circuitry. It operates with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor exhibits a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. Typical DC current gain (hFE) is 68 at 10 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 300 mV at 250 µA base current and 5 mA collector current. The DDTA114YKA-7-F is commonly utilized in consumer electronics and industrial control applications where space and component count reduction are critical. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 10mA, 5V
Supplier Device PackageSC-59-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms

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