DDTA114WKA-7-F
TRANS PREBIAS PNP 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA114WKA-7-F is a PNP pre-biased bipolar junction transistor (BJT). This surface-mount device features an integrated base resistor network (R1 = 10 kOhms, R2 = 4.7 kOhms) simplifying circuit design. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transition frequency is 250 MHz, with a power dissipation of 200 mW. Saturation voltage at 10 mA collector current is a maximum of 300 mV. Supplied in a SC-59-3 (TO-236-3) package on tape and reel, this component is suitable for applications in consumer electronics and industrial control systems requiring simplified switching and amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 24 @ 10mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |